- صفحه اصلی
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- دیتاشیت DTC115EET1G
DTC115EET1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | DTC115EET1G |
|---|---|
| حجم فایل | 87.009 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت DTC115EET1G |
دانلود دیتاشیت |
|---|
سایر مستندات
MUN2236(L), MUN5236, DTC115EE(EM3) 10 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: onsemi NSVMUN2236T1G
- Transistor Type: 1 NPN - Pre Biased
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 230mW
- DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,300uA
- Package: SC-59-3
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Base Part Number: NSVMUN22
- detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59
